nce p-channel enhancement mode power mosfet description the RM40P07 uses advanced trench technology and desig n to provide excellent r ds(on) with low gate charge. it can b e used in a wide variety of applications. general features ? v ds =-40v,i d =-6.2a r ds(on) <25m @ v gs =-10v r ds(on) <30m @ v gs =-4.5v ? h igh density cell design for ultra low rdson ? fully characterized avalanche voltage and current ? excellent package for good heat dissipation application ? power switching application ? hard switched and high frequency circuits ? dc-dc converter schematic diagram marking and pin assignment sop-8 top view package marking and ordering information device marking device device package reel size tape width quantity 40p07 RM40P07 sop-8 ?330mm 12mm 2500 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -40 v gate-source voltage v gs 20 v drain current-continuous i d -6.2 a drain current-continuous(t c =100 )i d (100 )-4 a pulsed drain current i dm 40 a maximum power dissipation p d 2.5 w operating junction and sto rage temperature range t j ,t stg -55 to 150 RM40P07 2016-11 rev:o15
thermal characteristic thermal resistance ,junction-to-ambient (note 2) r ja 50 /w electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =-250a -40 - - v zero gate voltage drain current i dss v ds =-40v,v gs =0v - - 1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =-250a -1.1 -1.7 -2.5 v v gs =-10v, i d =-5a - 16 25 m drain-source on-state resistance r ds(on) v gs =-4.5v, i d =-5a - 21 30 m forward transconductance g fs v ds =-5v,i d =-5a 20 - - s dynamic characteristics (note4) input capacitance c lss - 1750 - pf output capacitance c oss - 215 - pf reverse transfer capacitance c rss v ds =-20v,v gs =0v, f=1.0mhz - 180 - pf switching characteristics (note 4) turn-on delay time t d(on) - 9 - ns turn-on rise time t r - 8 - ns turn-off delay time t d(off) - 28 - ns turn-off fall time t f v dd =-20v, ,r l =2 v gs =-10v,r gen =3 - 10 - ns total gate charge q g - 24 - nc gate-source charge q gs - 3.5 - nc gate-drain charge q gd v ds =-20v,i d =-5a, v gs =-10v - 6 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =-6a - - 1.2 v diode forward current (note 2) i s - - -6.2 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production " " " " " " "
test circuit 1) e as test circuit 2) gate charge test circuit 3) switch time test circuit " " " " " " "
-vds drain-source voltage (v) figure 1 output characteristics -vgs gate-source voltage (v) figure 2 transfer characteristics - i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junction temperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance normalized -i d - drain current (a) -i d - drain current (a) normalized on-resistance vgs gate-source voltage (v) i s - reverse drain current (a) rating and characteristics curves (RM40P07) " " " " " " "
vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature ( ) figure 9 bv dss vs junction temperature t j -junction temperature( ) figure 10 v gs(th) vs junction temperature i d - drain current (a) c capacitance (pf) square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance normalized bvdss r(t),normalized effective transient thermal im p edance rating and characteristics curves (RM40P07) " " " " " " "
sop-8 package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 1.350 1.750 0.053 0.069 a1 0.100 0.250 0.004 0.010 a2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 d 4.700 5.100 0.185 0.200 e 3.800 4.000 0.150 0.157 e1 5.800 6.200 0.228 0.244 e 1.270(bsc) 0.050(bsc) l 0.400 1.270 0.016 0.050 0 r 8 r 0 r 8 r " " " " " " "
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